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MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS

ChongMing Group (HK) Int'l Co., Ltd
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    Buy cheap MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS from wholesalers
     
    Buy cheap MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS from wholesalers
    • Buy cheap MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS from wholesalers

    MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS

    Ask Lasest Price
    Brand Name :
    Model Number : MRF9030
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 7800pcs
    Delivery Time : 1 day
    • Product Details
    • Company Profile

    MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS


    The RF Sub–Micron MOSFET Line

    RF POWER FIELD EFFECT TRANSISTORS

    N–Channel Enhancement–Mode Lateral MOSFETs


    945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs


    Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.

    • Typical Two–Tone Performance at 945 MHz, 26 Volts

    Output Power — 30 Watts PEP

    Power Gain — 19 dB

    Efficiency — 41.5%

    IMD — –32.5 dBc

    • Integrated ESD Protection

    • Designed for Maximum Gain and Insertion Phase Flatness

    • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power

    • Excellent Thermal Stability

    • Characterized with Series Equivalent Large–Signal Impedance Parameters

    • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.


    MAXIMUM RATINGS

    RatingSymbolValueUnit
    Drain–Source VoltageVDSS68Vdc
    Gate–Source VoltageVGS–0.5, +15Vdc

    Total Device Dissipation @ TC = 25°C MRF9030R1

    Derate above 25°C

    PD

    92

    0.53

    Watts

    W/°C

    Total Device Dissipation @ TC = 25°C MRF9030SR1

    Derate above 25°C

    PD

    117

    0.67

    Watts

    W/°C

    Storage Temperature RangeTstg–65 to +200°C
    Operating Junction TemperatureTJ200°C

    PACKAGE DIMENSIONS


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    Quality MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS for sale
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