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MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor

ChongMing Group (HK) Int'l Co., Ltd
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    Buy cheap MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor from wholesalers
     
    Buy cheap MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor from wholesalers
    • Buy cheap MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor from wholesalers

    MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor

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    Brand Name :
    Model Number : MMBF170
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 8600pcs
    Delivery Time : 1 day
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    MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor


    BS170 / MMBF170

    N-Channel Enhancement Mode Field Effect Transistor


    General Description

    These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.


    Features

    • High density cell design for low RDS(ON).
    • Voltage controlled small signal switch.
    • Rugged and reliable.
    • High saturation current capability.

    Absolute Maximum Ratings TA = 25°C unless otherwise noted

    SymbolParameterBS170MMBF170Unit
    VDSSDrain-Source Voltage60V
    VDGRDrain-Gate Voltage (RGS < 1MW)60V
    VGSSGate-Source Voltage± 20V
    ID

    Drain Current - Continuous

    - Pulsed

    500500mA
    1200800mA
    PD

    Maximum Power Dissipation

    Derate Above 25°C

    830300mW
    6.62.4mW/°C
    TJ ,TSTGOperating and Storage Temperature Range-55 to 150°C
    TLMaximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds300°C
    THERMAL CHARACTERISTICS
    RθJAThermal Resistacne, Junction-to-Ambient150417°C/W

    Switching Test Circuit. Switching Waveforms.


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