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SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET

ChongMing Group (HK) Int'l Co., Ltd
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    Buy cheap SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET from wholesalers
     
    Buy cheap SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET from wholesalers
    • Buy cheap SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET from wholesalers

    SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET

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    Brand Name :
    Model Number : SI4435DY
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 8600pcs
    Delivery Time : 1 day
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    SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET


    SI4435DY

    30V P-Channel PowerTrench MOSFET


    General Description

    This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).


    Applications

    · Power management

    · Load switch

    · Battery protection


    Features

    · –8.8 A, –30 V RDS(ON) = 20 mW @ VGS = –10 V

    RDS(ON) = 35 mW @ VGS = –4.5 V

    · Low gate charge (17nC typical)

    · Fast switching speed

    · High performance trench technology for extremely low RDS(ON)

    · High power and current handling capability


    Absolute Maximum Ratings TA=25℃ unless otherwise noted

    SymbolParameterRatingsUnits
    VDSSDrain-Source Voltage-30V
    VGSSGate-Source Voltage±20V
    ID

    Drain Current – Continuous (Note 1a)

    – Pulsed

    –8.8A
    –50
    PD

    Power Dissipation for Single Operation (Note 1a)

    (Note 1b)

    (Note 1c)

    2.5

    W

    1.2
    1
    TJ, TSTGOperating and Storage Junction Temperature Range–55 to +175°C

    Thermal Characteristics

    RθJAThermal Resistance, Junction-to-Ambient (Note 1a)50°C/W
    RθJAThermal Resistance, Junction-to-Ambient (Note 1c)125°C/W
    RθJCThermal Resistance, Junction-to-Case (Note 1)25°C/W

    Package Marking and Ordering Information

    Device MarkingDeviceReel SizeTape widthQuantity
    SI4435DYSI4435DY13’’12mm2500 units

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