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NTR2101PT1G Power Mosfet Transistor Program ic Chip Memory IC

ChongMing Group (HK) Int'l Co., Ltd
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    Buy cheap NTR2101PT1G Power Mosfet Transistor Program ic Chip Memory IC from wholesalers
     
    Buy cheap NTR2101PT1G Power Mosfet Transistor Program ic Chip Memory IC from wholesalers
    • Buy cheap NTR2101PT1G Power Mosfet Transistor Program ic Chip Memory IC from wholesalers
    • Buy cheap NTR2101PT1G Power Mosfet Transistor Program ic Chip Memory IC from wholesalers

    NTR2101PT1G Power Mosfet Transistor Program ic Chip Memory IC

    Ask Lasest Price
    Brand Name : ON
    Model Number : NTR2101PT1G
    Certification : Original Factory Pack
    Price : Negotiation
    Payment Terms : T/T, Western Union,PayPal
    Supply Ability : 30000PCS
    Delivery Time : 1 Day
    • Product Details
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    NTR2101PT1G Power Mosfet Transistor Program ic Chip Memory IC

    Small Signal MOSFET −8.0 V, −3.7 A, Single P−Channel, SOT−23

    Features

    • Leading Trench Technology for Low RDS(on)

    • −1.8 V Rated for Low Voltage Gate Drive

    • SOT−23 Surface Mount for Small Footprint (3 x 3 mm)

    • Pb−Free Package is Available


    Applications

    • High Side Load Switch

    • DC−DC Conversion

    • Cell Phone, Notebook, PDAs, etc.


    ABSOLUTE MAXIMUM RATINGS(1)

    Drain−to−Source Voltage VDSS −8.0 V

    Gate−to−Source Voltage VGS ±8.0 V

    Continuous Drain Current (Note 1) t ≤ 10 s TA = 25°C ID −3.7 A TA = 70°C −3.0

    Power Dissipation (Note 1) t ≤ 10 s PD 0.96 W

    Pulsed Drain Current tp = 10 s IDM −11 A

    Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C

    Source Current (Body Diode) IS −1.2 A

    Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C


    PART OF STOCK

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    RES RL1206FR-070R68L1000000YAGEO16+SMD1206
    RES RC0402FR-0722KL3000000YAGEO16+SMD0402
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    RES RC1206JR-072ML500000YAGEO16+SMD1206
    CAP 1206 22PF 1KV NP0 CL31C220JIFNFNE600000SAMSUNG16+SMD1206

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