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MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode

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    Buy cheap MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode from wholesalers
     
    Buy cheap MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode from wholesalers
    • Buy cheap MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode from wholesalers

    MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode

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    Brand Name :
    Model Number : MGW12N120D
    Certification : new & original
    Price : Negotiate
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    Supply Ability : 8400pcs
    Delivery Time : 1 day
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    MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode


    Insulated Gate Bipolar Transistor with Anti-Parallel Diode
    N–Channel Enhancement–Mode Silicon Gate

    IGBT & DIODE IN TO–247
    12 A @ 90°C
    20 A @ 25°C
    1200 VOLTS
    SHORT CIRCUIT RATED

    This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost.

    • Industry Standard High Power TO–247 Package with Isolated Mounting Hole
    • High Speed Eoff: 150 J/A typical at 125°C
    • High Short Circuit Capability – 10 s minimum
    • Soft Recovery Free Wheeling Diode is included in the package
    • Robust High Voltage Termination
    • Robust RBSOA

    MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

    RatingSymbolValueUnit
    Collector–Emitter VoltageVCES1200Vdc
    Collector–Gate Voltage (RGE = 1.0 MΩ)VCGR1200Vdc
    Gate–Emitter Voltage — ContinuousVGE± 20Vdc

    Collector Current — Continuous @ TC = 25°C

    — Continuous @ TC = 90°C

    — Repetitive Pulsed Current (1)

    IC25

    IC90

    ICM

    20

    12

    40

    Vdc


    Apk

    Total Power Dissipation @ TC = 25°C

    Derate above 25°C

    PD

    125

    0.98

    Watts

    W/°C

    Operating and Storage Junction Temperature RangeTJ, Tstg–55 to 150°C

    Short Circuit Withstand Time

    (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)

    tsc10μs

    Thermal Resistance — Junction to Case – IGBT

    — Junction to Case – Diode

    — Junction to Ambient

    RθJC

    RθJC

    RθJA

    1.0

    1.4

    45

    °C/W
    Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 secondsTL260°C
    Mounting Torque, 6–32 or M3 screw10 lbf*in (1.13 N*m)

    (1) Pulse width is limited by maximum junction temperature. Repetitive rating.

    PACKAGE DIMENSIONS



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