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STP20NM50FP npn darliCM GROUPon power transistor Power Mosfet Transistor N-CHANNEL MDmesh?Power MOSFET

ChongMing Group (HK) Int'l Co., Ltd
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    Buy cheap STP20NM50FP npn darliCM GROUPon power transistor Power Mosfet Transistor N-CHANNEL MDmesh?Power MOSFET from wholesalers
     
    Buy cheap STP20NM50FP npn darliCM GROUPon power transistor Power Mosfet Transistor N-CHANNEL MDmesh?Power MOSFET from wholesalers
    • Buy cheap STP20NM50FP npn darliCM GROUPon power transistor Power Mosfet Transistor N-CHANNEL MDmesh?Power MOSFET from wholesalers

    STP20NM50FP npn darliCM GROUPon power transistor Power Mosfet Transistor N-CHANNEL MDmesh?Power MOSFET

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    Brand Name :
    Model Number : STP20NM50FP
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 7900pcs
    Delivery Time : 1 day
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    STP20NM50FP npn darliCM GROUPon power transistor Power Mosfet Transistor N-CHANNEL MDmesh?Power MOSFET


    STB20NM50 - STB20NM50-1
    STP20NM50 - STP20NM50FP

    N-CHANNEL 550V@Tjmax - 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK
    Zener-Protected SuperMESH™ MOSFET

    General features

    TypeVDSS(@Tj max)RDS(on)ID

    STB20NM50

    STB20NM50-1

    STP20NM50

    STP20NM50FP

    550 V

    550 V

    550 V

    550 V

    <0.25 Ω

    <0.25 Ω

    <0.25 Ω

    <0.25 Ω

    20 A

    20 A

    20 A

    20 A

    ■ HIGH dv/dt AND AVALANCHE CAPABILITIES
    ■ 100% AVALANCHE TESTED
    ■ LOW INPUT CAPACITANCE AND GATE CHARGE
    ■ LOW GATE INPUT RESISTANCE

    Description
    The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and exellent avalanche characteristics and dynamic performances.

    Applications
    The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization andhiher efficiencies.

    Absolute maximum ratings

    SymbolParameterValueUnit
    TO-220/D²PAK/I²PAKTO-220FP
    VGSGate-Source Voltage± 30V
    IDDrain Current (continuous) at TC = 25°C2020 (Note 3)A
    IDDrain Current (continuous) at TC = 100°C12.612.6 (Note 3)A
    IDM Note 2Drain Current (pulsed)8080 (Note 3)A
    PTOTTotal Dissipation at TC = 25°C19245W
    Derating Factor1.20.36W/°C
    dv/dt Note 1Peak Diode Recovery voltage slope15V/ns
    VISOInsulation Withstand Volatge (DC)-2000V

    Tj

    Tstg

    Operating Junction Temperature

    Storage Temperature

    -65 to 150°C


    Package


    Internal schematic diagram



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