IRFPE50 Transistor Electronics Components electronic Power MOSFET
Features
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
| C.I MM74HC164MX | FSC | P0552AD/P9FAD | SOP-14 |
| DIODO BYG23M-E3/TR | VISHAY | 1632 | SMA |
| DIODO SML4742A-E3/61 | VISHAY | 1632/12 | SMA |
| DIODO BYG23M-E3/TR | VISHAY | 1632 | SMA |
| DIODO SML4742A-E3/61 | VISHAY | 1632/12 | SMA |
| RES 2010 330R 5% CRCW2010330RJNEF | VISHAY | 1612 | SMD2010 |
| RES 2010 68K 5% CRCW201068K0JNEF | VISHAY | 1612 | SMD2010 |
| C.I MCP6S26-I/SL | MICROCHIP | 16255C4 | SOP-14 |
| ACOPLADOR. PC817A | SHARP | 2016.08.10/H33 | DIP-4 |
| TRANS 2SS52M | Honeywell | 2SSM/523-LF | TO-92 |
| C.I SCC2691AC1D24 | | 1149+ | SOP-24 |
| C.I TP3057WM | TI | XM33AF | SOP-16 |
| C.I CD14538BE | TI | 33ADS8K | DIP-16 |
| C.I CL2N8-G | MICROCHIP | CL2C | SOT-89 |
| C.I SN75179BP | TI | 57C50DM | DIP-8 |
| C.I L6219DS | ST | 135 | SOP-24 |
| CAP 1210 470PF 1KV NP0 CL32C471JIINNNE | SAMSUNG | AC7JO2H | SMD1210 |
| INDUTOR 3.3UH SLF6045T-3R3N2R8-3PF | TDK | YA16H0945122/3R3 | SMD6045 |
| CAP ELCO SMD 2.2UF 50V EEE-1HA2R2SR | PAN | Y1628F843536/2.2/50V/SYK | SMD4*5.4 |
| C.I 24LC256-I/SN | MICROCHIP | 1636M6G | SOP-8 |
| CAP ELCO SMD 150UF 25V UCD1E151MNL1GS | NICHICON | 160602/150/25V/H72 | SMD8*10.5 |
| RES RC0805JR-0727RL | YAGEO | 1538 | SMD0805 |
| C.I SN75240PW | TI | 11/A75240 | MSOP-8 |
| RES RC0805JR-0715KL | YAGEO | 1637 | SMD0805 |
| CAP CER 0805 1UF 10V X7R LMK212BJ105MG-T | TAIYOYUDEN | 1608 | SMD0805 |
| CAP CER 0805 4.7UF 50V X5R CL21A475KBQNNNE | SAMSUNG | AC7JO2H | SMD0805 |
| RES 0805 28K7 RC0805FR-0728K7L 1% | YAGEO | 1638 | SMD0805 |
| RES 3K3 5% CASE 0805RC0805JR-073K3L | YAGEO | 1623 | SMD0805 |
| TRIAC BTA26-600BRG | ST | 628 | TO-3P |
| CAP 0805 330NF 100V C2012X7S2A334K125AB | TDK | IB16F15763SD | SMD0805 |
Descriptions
Third generation Power MOSFETs from Vishay provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of TO-220
devices.
The TO-247 is similar but superior to the earlier TO-218 package
because of its isolated mounting hole. It also provides greater
creepage distance between pins to meet the requirements of most
safety specifications.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain-Source Voltage VDS 800 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V
TC = 25 °C ID 7.8 TC = 100 °C 4.9 A
Pulsed Drain Currenta IDM 31
Linear Derating Factor 1.5 W/°C
Single Pulse Avalanche Energyb EAS 770 mJ
Repetitive Avalanche Currenta IAR 7.8 A
Repetitive Avalanche Energya EAR 19 mJ
Maximum Power Dissipation TC = 25 °C PD 190 W
Peak Diode Recovery dV/dtc dV/dt 2.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to +
150 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m
