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IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching

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    Buy cheap IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching from wholesalers
     
    Buy cheap IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching from wholesalers
    • Buy cheap IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching from wholesalers

    IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching

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    Model Number : IRLL024NTRPBF
    Certification : new & original
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    Supply Ability : 10000pcs
    Delivery Time : 1 day
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    IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching


    IRLL024NPbF HEXFET® Power MOSFET


    • Surface Mount
    • Advanced Process Technology
    • Ultra Low On-Resistance
    • Dynamic dv/dt Rating
    • Fast Switching
    • Fully Avalanche Rated
    • Lead-Free

    Description

    Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


    The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.


    Absolute Maximum Ratings

    ParameterMax.Units
    ID @ TA = 25°CContinuous Drain Current, VGS @ 10V**4.4A
    ID @ TA = 25°CContinuous Drain Current, VGS @ 10V*3.1A
    ID @ TA = 70°CContinuous Drain Current, VGS @ 10V*2.5A
    IDMPulsed Drain Current12A
    PD @TA = 25°CPower Dissipation (PCB Mount)**2.1W
    PD @TA = 25°CPower Dissipation (PCB Mount)*1.0W
    Linear Derating Factor (PCB Mount)*8.3mW/°C
    VGSGate-to-Source Voltage± 16V
    EASSingle Pulse Avalanche Energy120mJ
    IARAvalanche Current3.1A
    EARRepetitive Avalanche Energy*0.1mJ
    dv/dtPeak Diode Recovery dv/dt5.0V/ns
    TJ, TSTGJunction and Storage Temperature Range-55 to + 150°C

    * When mounted on FR-4 board using minimum recommended footprint.

    ** When mounted on 1 inch square copper board, for comparison with other SMD devices.


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