Home > Flash Memory IC Chip >

CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs

Product Categories

ChongMing Group (HK) Int'l Co., Ltd

Contact Now

CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs

Ask Lasest Price
Brand Name :	Ti
Model Number :	CSD87312Q3E
Price :	Contact us
Payment Terms :	Paypal, Western Union, TT
Supply Ability :	50000 Pieces per Day
Delivery Time :	The goods will be shipped within 3 days once received fund

Add to Cart

Product Details
Company Profile

CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs

CSD87312Q3E Mosfet Power Transistor MOSFET Dual 30V N-CH NexFET Pwr MOSFETs

FEATURES

CommonSourceConn ection
Ultr a L o w Drain to Drain On-Resistance
Space Saving SON 3.3 x 3.3mm Plastic Package
Optimized for 5V Gate Drive
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free APPLICATIONS

APPLICATIONS

Adaptor/USB Input Protection for Notebook
PCs and Tablets

PRODUCT SUMMARY

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain to Source Voltage	30		V
Qg	Gate Charge Total (4.5V)	6.3		nC
Qgd	Gate Charge Gate to Drain	0.7		nC
RDD(on)	Drain to Drain On Resistance (Q1+Q2)	VGS = 4.5V	31	mΩ
RDD(on)	Drain to Drain On Resistance (Q1+Q2)	VGS = 8V	27	mΩ
VGS(th)	Threshold Voltage	1.0		V

ORDERING INFORMATION

Device	Package	Media	Qty	Ship
CSD87312Q3E	SON 3.3 x 3.3mm Plastic Package	13-In ch Reel	2500	Tape and Reel

ABSOLUTE MAXIMUM RATINGS

TA = 25°C		VALUE	UNIT
VDS	Drain to Source Voltage	30	V
VGS	Gate to Source Voltage	+10/-8	V
ID	(1) Continuous Drain Current, TC = 25°C	27	A
IDM	Pulsed Drain Current (2)	45	A
PD	Power Dissipation	2.5	W
TJ, TSTG	Operating Junction and Storage Temperature Range	–55 to 150	°C
EAS	Avalanche Energy, single pulse ID =24A,L=0.1mH,RG =25Ω	29	mJ

DESCRIPTION

The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.

Product Tags:

p channel mosfet driver circuit

n channel mos field effect transistor

CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	ChongMing Group (HK) Int'l Co., Ltd
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!

Explore more Flash Memory IC Chip products from this supplier

Find Similar Products By Category:

Electronic Components & Supplies

Hot Searches: