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2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

ChongMing Group (HK) Int'l Co., Ltd
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    Buy cheap 2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor from wholesalers
     
    Buy cheap 2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor from wholesalers
    • Buy cheap 2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor from wholesalers

    2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

    Ask Lasest Price
    Brand Name : TI
    Model Number : 2N7002LT1G
    Price : Contact us
    Payment Terms : Paypal, Western Union, TT
    Supply Ability : 50000 Pieces per Day
    Delivery Time : The goods will be shipped within 3 days once received fund
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    2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

    2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel


    Features

    • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L)

    • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant


    MAXIMUM RATINGS

    Rating

    Symbol

    Value

    Unit

    Drain−Source Voltage

    VDSS

    60

    Vdc

    Drain−Gate Voltage (RGS = 1.0 MW)

    VDGR

    60

    Vdc

    Drain Current
    − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2)

    ID

    ID IDM

    ± 115 ± 75 ± 800

    mAdc

    Gate−Source Voltage
    − Continuous
    − Non−repetitive (tp ≤ 50 ms)

    VGS VGSM

    ± 20 ± 40

    Vdc Vpk


    THERMAL CHARACTERISTICS

    Characteristic

    Symbol

    Max

    Unit

    Total Device Dissipation FR−5 Board (Note 3) TA = 25°C
    Derate above 25°C

    Thermal Resistance, Junction−to−Ambient

    PD RqJA

    225 1.8 556

    mW mW/°C °C/W

    Total Device Dissipation
    (Note 4) Alumina Substrate, TA = 25°C Derate above 25°C

    Thermal Resistance, Junction−to−Ambient

    PD RqJA

    300 2.4 417

    mW mW/°C °C/W

    Junction and Storage Temperature

    TJ, Tstg

    − 55 to +150

    °C

    Quality 2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor for sale
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