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CSD19532Q5B Mosfet Power Transistor 100V 4.0 MOhm N-Ch NexFET

ChongMing Group (HK) Int'l Co., Ltd
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    Buy cheap CSD19532Q5B Mosfet Power Transistor 100V 4.0 MOhm N-Ch NexFET from wholesalers
     
    Buy cheap CSD19532Q5B Mosfet Power Transistor 100V 4.0 MOhm N-Ch NexFET from wholesalers
    • Buy cheap CSD19532Q5B Mosfet Power Transistor 100V 4.0 MOhm N-Ch NexFET from wholesalers
    • Buy cheap CSD19532Q5B Mosfet Power Transistor 100V 4.0 MOhm N-Ch NexFET from wholesalers

    CSD19532Q5B Mosfet Power Transistor 100V 4.0 MOhm N-Ch NexFET

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    Brand Name : Ti
    Model Number : CSD19532Q5B
    Price : Contact us
    Payment Terms : Paypal, Western Union, TT
    Supply Ability : 50000 Pieces per Day
    Delivery Time : The goods will be shipped within 3 days once received fund
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    CSD19532Q5B Mosfet Power Transistor 100V 4.0 MOhm N-Ch NexFET

    CSD19532Q5B Mosfet Power Transistor MOSFET 100V 4.0 mOhm N-Ch NexFET Power MOSFET


    1 Features

    • Low Thermal Resistance

    • Avalanche Rated

    • Pb-Free Terminal Plating

    • RoHS Compliant

    • Halogen Free

    • SON 5-mm × 6-mm Plastic Package


    2 Applications

    • Synchronous Rectifier for Offline and Isolated DC- DC Converters

    • Motor Control


    3 Description

    This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFETTM power MOSFET is designed to minimize losses in power conversion applications.


    Product Summary

    TA = 25°C

    TYPICAL VALUE

    UNIT

    VDS

    Drain-to-Source Voltage

    100

    V

    Qg

    Gate Charge Total (10 V)

    48

    nC

    Qgd

    Gate Charge Gate to Drain

    8.7

    nC

    RDS(on)

    Drain-to-Source On Resistance

    VGS = 6 V

    4.6

    VGS =10V

    4

    VGS(th)

    Threshold Voltage

    2.6

    V


    Ordering Information(1)

    Device

    Media

    Qty

    Package

    Ship

    CSD19532Q5B

    13-Inch Reel

    2500

    SON 5 x 6 mm Plastic Package

    Tape and Reel

    CSD19532Q5BT

    13-Inch Reel

    250


    Absolute Maximum Ratings

    TA = 25°C

    VALUE

    UNIT

    VDS

    Drain-to-Source Voltage

    100

    V

    VGS

    Gate-to-Source Voltage

    ±20

    V

    ID

    Continuous Drain Current (Package limited)

    100

    A

    Continuous Drain Current (Silicon limited), TC = 25°C

    140

    Continuous Drain Current(1)

    17

    IDM

    Pulsed Drain Current(2)

    400

    A

    PD

    Power Dissipation(1)

    3.1

    W

    Power Dissipation, TC = 25°C

    195

    TJ, Tstg

    Operating Junction and Storage Temperature Range

    –55 to 150

    °C

    EAS

    Avalanche Energy, single pulse ID =74A,L=0.1mH,RG =25Ω

    274

    mJ

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