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LM5109BMAX/NOPB Power Path Management IC Gate Drivers Hi Vtg 1A Peak Half Bridge Gate Dvr

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    Buy cheap LM5109BMAX/NOPB Power Path Management IC Gate Drivers Hi Vtg 1A Peak Half Bridge Gate Dvr from wholesalers
     
    Buy cheap LM5109BMAX/NOPB Power Path Management IC Gate Drivers Hi Vtg 1A Peak Half Bridge Gate Dvr from wholesalers
    • Buy cheap LM5109BMAX/NOPB Power Path Management IC Gate Drivers Hi Vtg 1A Peak Half Bridge Gate Dvr from wholesalers

    LM5109BMAX/NOPB Power Path Management IC Gate Drivers Hi Vtg 1A Peak Half Bridge Gate Dvr

    Ask Lasest Price
    Brand Name : TI
    Model Number : LM5109BMAX/NOPB
    Price : Contact us
    Payment Terms : Paypal, Western Union, TT
    Supply Ability : 50000 Pieces per Day
    Delivery Time : The goods will be shipped within 3 days once received fund
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    LM5109BMAX/NOPB Power Path Management IC Gate Drivers Hi Vtg 1A Peak Half Bridge Gate Dvr

    LM5109BMAX/NOPB Power Path Management IC Gate Drivers Hi Vtg 1A Peak Half Bridge Gate Dvr


    1 Features

    • Drives Both a High-Side and Low-Side N-Channel MOSFET
    • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source)

    • Inputs Compatible With Independent TTL and CMOS

    • Bootstrap Supply Voltage to 108-V DC

    • Fast Propagation Times (30 ns Typical)

    • Drives 1000-pF Load With 15-ns Rise and Fall Times

    • Excellent Propagation Delay Matching (2 ns Typical)

    • Supply Rail Undervoltage Lockout

    • Low Power Consumption

    • 8-Pin SOIC and Thermally-Enhanced 8-Pin WSON Package


    2 Applications

    • Current-Fed, Push-Pull Converters

    • Half- and Full-Bridge Power Converters

    • Solid-State Motor Drives

    • Two-Switch Forward Power Converters


    3 Description

    The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally- enhanced 8-pin WSON packages.

    Device Information

    PART NUMBER

    PACKAGE

    BODY SIZE (NOM)

    LM5109B

    SOIC (8)

    4.90 mm × 3.91 mm

    WSON (8)

    4.00 mm × 4.00 mm

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